chip silicon rectifier FFM101 thru ffm107 fast recovery type features plastic package has underwriters laborat ory flammability classificatio n 94v -o u tiliz ing flame retardant epox y m olding compound. for surface mounted applicat ions. ex ceeds environmental standards of m il-s- 19500 / 228 low leakage current . mechanical dat a case : mol ded plastic, jede c d o-214ac termi nals : solder plated, s olderable per mil-st d-750, method 2026 pol arity : indicated by cathode band mounting p osition : any weight : 0.0015 ounce, 0.05 gr am (v) (v) (v) (v) (ns) ( o c) FFM101 f11 50 35 50 ffm102 f12 100 70 100 ffm103 f13 200 140 200 ffm104 f14 400 280 400 ffm105 f15 600 420 600 250 ffm106 f16 800 560 800 ffm107 f17 1000 700 1000 -55 to +150 operating temperature v rrm *1 v rms *2 v r *3 v f *4 t rr *5 500 150 symbols marking code 1.3 maximum ratings (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit forward rectified current ambient temperature = 55 o c i o 1.0 a forward surge current 8.3ms single half sine-wave superimposed on rate load (jedec methode) i fsm 30 a v r = v rrm t a = 25 o c 5.0 ua v r = v rrm t a = 100 o c 100 ua thermal resistance junction to ambient r q ja 32 o c / w diode junction capacitance f=1mhz and applied 4vdc reverse voltage c j 15 pf storage temperature t stg -55 +150 o c reverse current i r *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage *5 reverse recovery time 0.185(4.8) 0.177(4.4) 0.012(0.3) typ. 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.067(1.7) 0.060(1.5) 0.040 (1.0) typ. 0.040(1.0) typ. dimensions in inches and (millimeters) sma f o r m o s a m s
0.1 1.0 .01 10 50 rating and characteristic curves (FFM101 thru ffm107) fig.1-typical forward characteristics fig.2-typical forward current dera ting curve a v e r a g e f o r w a r d c u r r e n t , ( a ) fig.5-typical junction capacit ance reverse voltage,(v) j u n c t i o n c a p a c i t a n c e , ( p f ) i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) forward volt age,(v) pulse width 300us 1% duty cycle 0.2 0.4 0.6 0.8 1.0 1.2 35 30 25 20 15 10 5 0 (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non-inductive w notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | || | | | | | 1cm set time base for 50 / 10ns / cm trr .01 .05 .1 .5 1 5 10 50 100 d.u.t. .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 3.0 ambient temperature ( c) fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive w w tj=25 c fig.4-maximum non-repetitive forward surge current p e a k f o r w a a r d s u r g e c u r r e n t , ( a ) 10 0 20 30 40 50 number of cycles at 60hz 1 10 5 50 100 tj=25 c 8.3ms single half sine wave jedec method single phase half wave 60hz resistive or inductive load 0 20 40 60 80 100 120 140 160 180 200 0
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